Barrage munition with artificial intelligence V2U

Module with N-channel MOSFET transistors HYGO015N10 A3G01NS1B
Barrage munition with artificial intelligence V2U
Module with N-channel MOSFET transistors
HYGO015N10 A3G01NS1B
Module with N-channel MOSFET transistors (Photo 256)
Name and marking
Module with N-channel MOSFET transistors
HYGO015N10
A3G01NS1B
Manufacturer's headquarters country
People's Republic of China
Extended description
Additional information
Publication date
09.06.2025
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