Ballistic missile 9M723-1 "Iskander-M"

Field effect transistor (MOSFET) IRF 3710 IOR P117J 00 3F
Ballistic missile 9M723-1 "Iskander-M"
Unit 9B918
Unit board 9B918
Field effect transistor (MOSFET)
IRF 3710 IOR P117J 00 3F
Field effect transistor (MOSFET)
Name and marking
Field effect transistor (MOSFET)
IRF 3710
IOR P117J
00 3F
Manufacturer's headquarters country
United States of America
Extended description
Additional information
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War & Sanctions 2024