Ballistic missile 9M723-1 "Iskander-M"

RAM chip (4-Mbit, 256K x 16, SRAM) CY7C1041DV 33-10BVXI PHI 2015 N 04 CYP 701379
Ballistic missile 9M723-1 "Iskander-M"
Unit 9B918
Coupling module with two redundant multiplex channels (PC/104 form factor)
RAM chip (4-Mbit, 256K x 16, SRAM)
CY7C1041DV 33-10BVXI PHI 2015 N 04 CYP 701379
RAM chip (4-Mbit, 256K x 16, SRAM)
Name and marking
RAM chip (4-Mbit, 256K x 16, SRAM)
CY7C1041DV
33-10BVXI
PHI 2015
N 04
CYP 701379
Manufacturer's headquarters country
United States of America
Extended description
Production date
April (15th week) 2020
Additional information
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